ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 1 - green power off line smps primary switche features ? 85v to 265v wide range ac voltage input ? a 7 3 0v mosfet on the same silicon chip ? auto start up with high voltage current source ? pwm with current mode control ? 10 v to 3 9 v wide range vcc voltage ? f i x ed 55 kh z switching frequency ? automatic skip cycle mode in low load condition. ? over temperature, over current and over voltage protection ? auxiliary under voltage lockout with hysteresis applications ? power ac/dc adapters for chargers ? electromagnetic oven power supplies ? air conditioner power supplies ? ac/dc led driver applications package type so p 8 dip8 european (195 - 265 vac) 8w 13w us (85 - 265 vac) 5 w 8w typical application http://www..net/ datasheet pdf - http://www..net/
ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 2 - pin c onfiguration pin definitions pin number pin name pin function description 1,2 gnd sense fet source terminal on primary side and internal control ground. 3 comp feedback input defines the peak drain mosfet current. 4 vcc positive supply voltage inp ut. although connected to an auxiliary transformer winding, current is supplied from sw via an internal switch during startup (see internal block diagram section). it is not until vcc reaches them uvlo upper thres hold (1 5 .5v) that the internal start - up swi tch opens and device power is supplied via the auxiliary transformer winding. 5,6,7,8 sw the sw pin is designed to connect directly to the primary lead of the transformer and is capable of switching a maximum of 700v. internal block diagram o s c i l i t o r s t a r t u p c o n i r o l o u t p u t d r i v e r r 1 r 2 r 3 r 4 f f s q p w m l a t c h e r o t p l e b r e f e r e n c e b i a s p r e - r e g u l a t o r r 1 r 2 + - - + - + m 1 m 2 s t a r t u p s o u r c e c o m p g n d o v p d e t e c t u v l o c o n t r o l s w v c c http://www..net/ datasheet pdf - http://www..net/
ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 3 - absolute maximum ratings (t a =25c, unless otherwise specified) symbol parameter value unit v sw sw to gnd voltage (t j =25 - 125c) - 0.3 ... 730 v i d continuous vdmos drain current internally limited a vcc supply voltage 0...50 v i comp feedback cur rent 3 ma v esdmm electrostatic discharge: machine model ((r=0 ; c=200pf) 200 v v esdhbm electrostatic discharge: hbm 2000 v t j junction operating temperature internally limited c t c case operating temperature - 40 to 150 c t stg storage temperature - 55 to 150 c electrical characteristic (pow er) symbol parameter condition min. typ. max. unit bv dss vdmos breakdown voltage i d =1ma; v comp =2v 730 750 v i dss zero gate voltage drain current v ds =500v; v comp =2v; 100 a r dson static drain - source on resistance v gs =10v i d =0.4a; 27 30 t r rise tim e i d =0.1a; v in =300v 50 t f fall time i d =0.2a; v in =300v 100 ns c oss vdmos drain capacitance v ds =25v 40 pf http://www..net/ datasheet pdf - http://www..net/
ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 4 - electrical characteristic (control) (t a =25c, vcc=18v, unless otherwise specified) symbol parameter condition min. typ. max . unit uvlo section v start vcc start threshold voltage v comp =0v 1 4 1 5 .5 1 7 v v stop vcc stop threshold voltage v comp =0v 8 9 10 v v hys vcc threshold hysteresis 5.8 6.5 7.2 v oscillator section f osc initial accuracy v stop vcc 35 v; 0 t j 100c 4 8 55 6 2 khz f / t frequency change with temperature - 25c t j +85c 5 10 % feedback section i comp feedback shutdown current tj=25c, v comp = 0v 0.9 ma r comp comp pin input impedance id=0ma 1. 4 k current limit (self - protection)section g id i comp to i d current gain 320 i lim peak current limit t j = 25c 0. 32 0. 4 0 0. 48 a t d current sense delay to turn - off i d =0.2a 200 ns t b blanking time 500 ns t onmin minimum turn on time 700 ns protectio n section t sd thermal shutdown temperature 140 170 - c t hyst thermal shutdown hysteresis 40 c v ovp over voltage protection 3 9 4 3 4 7 v supply current section i ch startup charging current 1 ma i choff start up charging current in thermal shutdown vcc=5v; v ds =100v t j > t sd 0.2 ma i op0 operating supply current (control part only) switching v comp = 0v 4 ma i op1 operating supply current (control part only) not switching v comp = 2v 2.6 5 ma http://www..net/ datasheet pdf - http://www..net/
ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 5 - functional descriptio n s tartup th is device includes a high voltage start up current source connected on the sw of the device. as soon as a voltage is applied on the input of the converter, this start up current source is activated and to charge the vcc capacitor as long as vcc is lower th an vstart. when reaching vstart, the start up current source is cut off by uvlo&tsd and the device begins to operate by turning on and off its main power mosfet. as the comp pin does not receive any current from the opto - coupler, the device operates at ful l current capacity and the output voltage rises until reaching the regulation point where the secondary loop begins to send a current in the opto - coupler. at this point, the converter enters a regulated operation where the comp pin receives the amount of c urrent needed to deliver the right power on secondary side. fi g 1 startup circuit f eedback a feedback pin controls the operation of the device. unlike conventional pwm control circuits which use a voltage input, the comp pin is s ensitive to current. figure 2 presents the internal current mode structure. the power mosfet delivers a sense current which is proportional to the main current. r2 receives this current and the current coming from the comp pin. the voltage across r2 vr2 is fi g 2 feedback circuit then compared to a fixed reference voltage. the mosfet is switched off when vr2 equals the reference voltage. leading edge blanking (leb) at the instant the internal sense fet is turned on, there usually exists a high current spike through the sense fet, caused by the primary side capacitance and secondary side rectifier diode reverse recovery. excessive voltage across the sense resistor would lead to false feedback operation in the current mode pwm control. to counter this e ffect, the device employs a leading edge blanking (leb) circuit. this circuit inhibits the pwm comparator for a short time (typically 500ns) after the sense fet is turned on. under voltage lock out once fault condition occurs, switching is terminated and t he sense fet remains off. this causes vcc to fall. when vcc reaches the uvlo stop voltage, 9 v, the protection is reset and the internal high voltage current source charges the vcc capacitor. when vcc re aches the uvlo start voltage, 1 5 .5v, the device resume s its normal operation. in this manner, the auto - restart can alternately enable and disable the switching of the power sense fet until the fault condition is eliminated. thermal shutdown (tsd) t he sense fet and the control ic are integrated in the same ch ip, making it easier for the control ic to detect the temperature of the sense fet. when the temperature exceeds approximately 170c, thermal shutdown is activated, the device turn off the sense fet and the high voltage current source to charge vcc . the de vice will go back to work when the lower threshold temperature about 140c is reached. over voltage protection (ovp) in case of malfunction in the secondary side feedback circuit, or feedback loop open caused by a defect of solder, the current through the opto - coupler transistor becomes almost zero. because excess energy is provided to the output, the output voltage may exceed the rated voltage, resulting in the breakdown of the devices in the secondary side. in order to prevent this situation, an over volt age protection (ovp) circuit is employed. if vcc exceeds 4 3 v, ovp circuit is activated resulting in termination of the switching operation. in order to avoid undesired activation http://www..net/ datasheet pdf - http://www..net/
ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 6 - of ovp during normal operation, vcc should be properly designed to be below 4 3 v. reference circuit http://www..net/ datasheet pdf - http://www..net/
ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 7 - package dimensions dip8 size symbol min(mm) max(min) size symbol min(mm) max(min) a 9.30 9.50 c2 0.50 a1 1.524 c3 3.3 a2 0.39 0.53 c4 1.57typ a3 2.54 d 8.2 8.8 a4 0.66typ d1 0.2 0.35 a5 0.99typ d2 7.62 7.87 b 6.3 6.5 1 8otyp c 7.2 2 8otyp c1 3.3 3.5 3 5otyp c c 1 c 2 c 3 c 4 a 1 a 2 a 3 a 4 a 5 a b d d 1 d 2 1 2 3 http://www..net/ datasheet pdf - http://www..net/
ap 8012 chipown 8/f, chuangyuan building no.21 - 1 changjiang road, wuxi new destrict tel: +86(510)8521 - 7718 http://www.chipown.co m.cn - 8 - important notice chipown microelectronics co. ltd. reserves the right to make changes without further notice to any products or specifications herein. chipown microelectronics co. ltd. does not assume any responsibility for use of any its products for any particular purpose, nor does chipown microelectronics co. ltd assume any liability arising out of the application or use of any its products or circuits. chipown microelectronics co. ltd does not conv ey any license under its patent rights or other rights nor the rights of others. http://www..net/ datasheet pdf - http://www..net/
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